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(R) ISO 9001 Registered
Process C1210
CMOS 1.2m Zero Threshold Devices
Electrical Characteristics
N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage Zero Vt N-Channel Transis. Threshold Voltage Body Factor Conduction Factor Saturation Current Symbol VTN N N LeffN WN BVDSSN VTFP(N) Symbol VTZLN ZLN ZLN IDSATZN Minimum 0.55 64 0.8 9 10 Minimum 0.00 75 28 Typical 0.15 0.348 90 34 Typical 0.75 0.34 75 1.0 0.6
T=25oC Unless otherwise noted Maximum Unit Comments 0.95 V 100x1.2m V1/2 100x1.2m 86 A/V2 100x100m 1.2 m 100x1.2m m Per side V V
Maximum 0.30 105 40 Unit V V1/2 A/V2 mA Comments 100x100m 100x100m 100x100m 100x1.5m
P-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage
Symbol VTP P P LeffP WP BVDSSP VTFP(P)
Minimum -0.7 21 0.9 -9.0 -10.0
Typical -0.9 0.38 25 1.1 0.8
Maximum -1.1 29 1.3
Unit V V1/2 A/V2 m m V V
Comments 100x1.2m 100x1.2m 100x100m 100x1.2m Per side
Zero Vt P-Channel Transis. Threshold Voltage Body Factor Conduction Factor Saturation Current
Symbol VTZLP ZLP ZLP IDSATZP
Minimum -0.3 21 -11
Typical -0.1 0.36 26 -15
Maximum 0.1 31 -19
Unit V V1/2 A/V2 mA
Comments 100x100m 100x100m 100x100m 100x1.5m
(c) IMP, Inc.
47
Process C1210
Electrical Characteristics
Diffusion & Thin Films Well (field) Sheet Resistance N+ Sheet Resistance N+ Junction Depth P+ Sheet Resistance P+ Junction Depth Gate Oxide Thickness Field Oxide Thickness Gate Poly Sheet Resistance Bottom Poly Sheet Res. Metal-1 Sheet Resistance Metal-2 Sheet Resistance Passivation Thickness Capacitance Gate Oxide Metal-1 to Poly-1 Metal-1 to Silicon Metal-2 to Metal-1 Poly-1 to Poly-2
Symbol N-well(f) N+ xjN+ P+ xjP+ TGOX TFIELD POLY2 POLY1 M1 M2 TPASS Symbol COX CM1P CM1S CMM CP1P2
Minimum 0.6 20 50
15
Typical 1.0 35 0.35 75 0.35 24 800 22 35 50 30 200+900 Typical 1.38 0.057 0.035 0.86
Maximum 1.3 50 100
30
Unit K/ / m / m nm nm / / m/ m/ nm Unit fF/m2 fF/m2 fF/m2 fF/m2 fF/m2
Comments n-well
oxide+nit. Comments
Minimum 1.28
Maximum 1.58
0.69
1.03
48
C1210-4-98
Process C1210
Physical Characteristics
Starting Material Starting Mat. Resistivity Typ. Operating Voltage Well Type Metal Layers Poly Layers Contact Size Via Size Metal-1 Width/Space Metal-2 Width/Space Gate Poly Width/Space EPI P <100> 7 - 8.5 -cm 5V N-well 2 2 1.5x1.5m 1.5x1.5m 2.5 / 1.5m 2.5 / 1.5m 1.5 / 2.0m N+/P+ Width/Space N+ To P+ Space Contact To Poly Space Contact Overlap Of Diffusion Contact Overlap Of Poly Metal-1 Overlap Of Contact Metal-1 Overlap Of Via Metal-2 Overlap Of Via Minimum Pad Opening Minimum Pad-to-Pad Spacing Minimum Pad Pitch 2.5/ 2.0m 9.0m 1.5m 1.0m 1.0m 1.0m 1.0m 1.0m 65x65m 5.0m 80.0m
Special Feature of C1210 Process: This process offers zero threshold n- and p-channel transistors in addition to normal threshold transistors of CMOS 1.2m technology.
Metal 2
VIA
Metal 1
Metal 1
SIO2 LTO LTO n+
Poly gate Source Sidewall spacer Contact Drain LDD
n+
N-well contact
p+
Poly gate Source
p+
Drain
n+ p
p+
p- substrate contact Channel stop
Field Oxide
Sidewall spacer Bottom poly Poly gate Contact
p
N-well
p-epi p+ substrate
Cross-Sectional view of the LVMOS process
ID vs VD, W/L = 20/1.2 5.5
VGS = 4.0V
ID vs VD, W/L = 20/1.2 -3.0
VGS = -5.0V VGS = -4.0V
Drain Current ID (mA)
Drain Current ID (mA)
VGS = 3.0V
0.55 mA /div
VGS = 2.0V
0.3 mA /div
VGS = -3.0V
VGS = -2.0V
VGS = 1.0V
VGS = -1.0V
.00
VGS = 0V
0
1
2 3 4 Drain Voltage (v) VDS
5
.00
VGS = 0.0V
0
-1
-2 -3 -4 Drain Voltage (v) VDS
-5
n-ch Transistor IV characteristics of a 20/1.2 device
p-ch Transistor IV characteristics of a 20/1.2 device
(c) IMP, Inc.
49
50
C1210-4-98

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